Dr. Dashen Shen

Professor Emeritus, ECE

Contact

301 Sparkman Drive
Huntsville, AL 35899
Campus Map

shend@uah.edu

Biography

Curriculum Vitae

Education

  • Ph.D., Electrical Materials and Devices, Princeton University, 1988
  • B.S., Applied physics, Shanghai University of Technology, 1982

Expertise

  • Thin film semiconductor materials and devices
  • flat panel displays
  • solar cells
  • novel silicon-on-insulator materials and devices

Recent Publications

  • "Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism", Li Zheng, Xinhong Cheng, Zhongjian Wang, Chao Xia, Duo Cao, Lingyan Shen, Qian Wang, Yuehui Yu, and Dashen Shen, J. Phys. Chem. C, 2015, 119 (11), pp 5995–6000, Publication Date (Web): March 5, 2015

  • "Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si", Duo Cao, Xinhong Cheng, Li Zheng, Dawei Xu, Zhongjian Wang, Cao Xia, Lingyan Shen, Yuehui Yu, Dashen Shen, J. Vac. Sci. Technol. B 33, 01A101 (2015)

  • "Improvement of SOI Trench LDMOS Performance with Double Vertical Metal Field Plate", Chao Xia, Xinhong Cheng, Zhongjian Wang, Dawei Xu, Duo Cao, Li Zheng, Lingyang Shen, Yuehui Yu, and Dashen Shen, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 10, p. 3477, OCTOBER 2014

  • "Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition", Wenyan Wan, Xinhong Cheng, Duo Cao, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Lingyang Shen, Yuehui Yu, and Dashen Shen, J. Vac. Sci. Technol. A 32, 01A127 (2014)

  • "A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate", Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen, Microelectronics Reliability, Elsevier Science. Oxford, Vol. 54, p. 582, March 2014

  • "Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition", Li Zheng, Xinhong Cheng, Duo Cao, Zhongjian Wang, Chao Xia, Yuehui Yu, and Dashen Shen, Appl. Phys Lett, vol. 104, 023112, 2014