Dr. Arne Croell

Research Engineer / Scientist, RSESC


301 Sparkman Drive
Von Braun Research Hall
Room M43D
Huntsville, AL 35899
Campus Map



Dr. Croell received a diploma (M.Sc.) in Mineralogy from the University of Freiburg in Germany in 1984 and a Ph.D. in Crystallography in 1988. He later received his "Habilitation" in Crystallography and Materials Science from the University of Freiburg in 1997. He worked as Research Scientist at the Universities of Freiburg and Karlsruhe from 1984-1998 and as Senior Research Scientist at UAH from 1998-2000. From 2000-2003 he was Associate Professor for Electronic Materials at the University of Freiberg/Saxony (Germany), and since 2003 Professor of Crystallography at the University of Freiburg. He is currently on an extended leave to Huntsville.

He has been involved in microgravity experiments continuously since 1984 and participated as PI or Co-I in 5 experiments on manned missions (Spacelab and Spacehab), 11 experiments on unmanned orbital satellites (FOTON), 13 experiments on sounding rockets, and 3 parabolic flight campaigns. At UAH, he is currently involved in the preparation of a series of experiments on the ISS.

Dr. Croell specializes in crystal growth, his most recent research topics are: detached Bridgman growth of semiconductor single crystals; nucleation and impurities in multicrystalline silicon for solar cells; radiation detection materials; thermo- and solutocapillary convection in crystal growth; vibrational convection in FZ and Bridgman growth; external fields in crystal growth


  • Ph.D., Crystallography, 1998
  • M.S., Mineralogy, University of Freiburg, Germany, 1984

Recent Publications

  • J. Friedrich, C. Reimann, T. Jauss, A. Cröll, and T. Sorgenfrei: Interaction of SiC particles with moving solid-liquid interface during directional solidification of silicon. J. Crystal Growth 447 (2016), 18-26. DOI: 10/1016/j.jcrysgro.2016.04.061

  • H. Aufgebauer, J. Kundin, H. Emmerich, M. Azizi, C. Reimann, J. Friedrich, T. Jauss, T. Sorgenfrei, and A. Cröll: Phase-field simulations of particle capture during the directional solidification of silicon. J. Crystal Growth 446 (2016), 12-26. DOI: 10/1016/j.jcrysgro.2016.04.032

  • J. Tonn, M. Matuchova, A. N. Danilewsky, and A. Cröll: Removal of oxidic impurities for the growth of high purity lead iodide single crystals. J. Crystal Growth 416 (2015), 82-89. DOI: 10.1016/j.jcrysgro.2015.01.024

  • R.E. Banai, L.A. Burton, S.G. Choi, F. Hofherr, T. Sorgenfrei, A. Walsh, A. Cröll, and J.R.S. Brownson: Ellipsometric characterization and density-functional theory analysis of anisotropic optical properties of single-crystal ?-SnS. J. Appl. Phys. 116, (2014) 013511. DOI: 10.1063/1.4886915

  • A.C. Wagner, A. Cröll, M.A. Gonik, H. Hillebrecht, S. Binetti, and A. LeDonne: Si1-xGex (x?0.2) crystal growth in the absence of a crucible. J Crystal Growth 401 (2014), 762-766. DOI: 10.1016/j.jcrysgro.2013.11.065

  • M. Gonik and A. Cröll: Si-Ge – The possibility of growing large crystals of Si-Ge using an axial thermal flow near the crystallization front. – Materials of Electronic Technics (ISSN 1609-3597) 3 (2013), 12-19

  • T. Sorgenfrei, F. Hofherr, T. Jauß, and A. Cröll: Synthesis and single crystal growth of SnS by the Bridgman-Stockbarger technique. Crystal Research and Technology 48 (2013), 193-199, DOI: 10.1002/crat.201200484

  • M. A. Gonik and A. Cröll: Silicon crystal growth by the modified FZ technique. CrystEngComm 15 (2013), 2287-2293, DOI: 10.1039/c2ce26480c

  • T. Jauß, A.N. Danilewsky, J. Wittge, A. Cröll, J. Garragorri, R.M. Elizalde, D. Allen, and P. McNally: Influence of mechanical defects on the crystal lattice of silicon. Cryst. Res. Technol. 47 (2012), 253-260, DOI: 10.1002/crat.201100488

  • A. Danilewsky, J. Wittge, A. Hess, A. Cröll, A. Rack, T. dos Santos Rolo, D. Allen, P. McNally, P. Vagovic, Z. Li, T. Baumbach, E. Gorostegui-Colinas, J. Garagorri, M. R. Elizalde, D. Jacques, M. Fossati, D. K. Bowen, and B. Tanner: In Situ High Temperature Diffraction Imaging of Dislocation Dynamics in Silicon. Physica Status Solidi A 208 (2011), 2499-2504, DOI: 10.1002/pssa.201184264