semiconductor alloys crucibles Conical Crucibles for Bridgman Crystal Growth of Ternary Semiconductor Alloys Docket: UAH-P-08019 Technology Researchers at UAH have developed a new crucible design that will significantly enhance the radial homogeneity of a crystal during Vertical Bridgman growth system. This new design leads to a desirable geometry interface shape which is ideal for defect-free crystal growth. The technology developed here is important in achieving compositional uniformity adequate for further semiconductor processing that would enable fabrication of novel electronic and opto-electronic devices. Compared to vertical crucibles, which produce a more concave interface, the new crucible designed at UAH produces a better interface. This allows for a more homogeneous melt. The standard for composition uniformity of ternary bulk crystals is currently 0.5mol% per inch, which is considered commercially attractive. Testing shows that the crucible designed at UAH can achieve ternary bulk crystals that are 2 inches in diameter and 2 inches long with compositions of better than 0.2mol% per inch, which exceeds the current standard. Applications Fabrication of novel electronic and opto-electronic devices Fabrication of high-speed electronics and long wavelength IR detectors Advantages Defect-free crystal growth Crystal can easily be removed from crucible Reduced crystal radial stress and interface deflection Cost-effective Status State of Development: Proof of concept Licensing Status: Available for licensing Patent Status: Proprietary