Conical Crucibles for Bridgman Crystal Growth of Ternary Semiconductor Alloys

Conical Crucibles for Bridgman Crystal Growth of Ternary Semiconductor Alloys

Docket: UAH-P-08019


Researchers at UAH have developed a new crucible design that will significantly enhance the radial homogeneity of a crystal during Vertical Bridgman growth system. This new design leads to a desirable geometry interface shape which is ideal for defect-free crystal growth.

The technology developed here is important in achieving compositional uniformity adequate for further semiconductor processing that would enable fabrication of novel electronic and opto-electronic devices. Compared to vertical crucibles, which produce a more concave interface, the new crucible designed at UAH produces a better interface. This allows for a more homogeneous melt.

The standard for composition uniformity of ternary bulk crystals is currently 0.5mol% per inch, which is considered commercially attractive. Testing shows that the crucible designed at UAH can achieve ternary bulk crystals that are 2 inches in diameter and 2 inches long with compositions of better than 0.2mol% per inch, which exceeds the current standard.


  • Fabrication of novel electronic and opto-electronic devices
  • Fabrication of high-speed electronics and long wavelength IR detectors


  • Defect-free crystal growth
  • Crystal can easily be removed from crucible
  • Reduced crystal radial stress and interface deflection
  • Cost-effective


  • State of Development: Proof of concept
  • Licensing Status: Available for licensing
  • Patent Status: Proprietary