The Chemistry and Engineering in Electrodeposition for Advanced Electronic Applications

Qiang Huang

Chemical and Biological Engineering

Center for Materials for Information Technology

University of Alabama

Electrochemical deposition has been one of the enabling technologies for advanced electronic devices, including integrated circuits (IC) and microelectromechanical systems (MEMS). As the IC devices further develop, new materials and new processes are required not only to scale the dimensions but also to promote performances. This talk overviews our recent investigations on new chemistries and new processes to fabricate cobalt for advanced semiconductor circuits and Rhenium films for superconducting circuits. The mechanism of a class of new additives suppressing cobalt electrodeposition will be discussed in conjunction with not only the nucleation and growth of cobalt but also the incorporation of impurities into the film. An improved superconductivity critical temperature was observed for electrodeposited rhenium films and the relationship between this improvement and the amorphous grain structure will be discussed.

Bio:

Qiang Huang obtained his Bachelor degree in Biochemical Engineering from Zhejiang University in 1997, and his PhD degree in Chemical Engineering from Louisiana State University in 2004. He moved to IBM TJ Watson Research Center in New York after graduation and worked there for 11 years, first as a postdoc for two years and later as a Research Staff Member and a Project Manager. He joined UA as an assistant professor in Chemical Engineering Department in Spring 2016. His research has been focused on Electrochemical Engineering for the fabrication of materials and devices.