ProfessorElectrical & Computer Engineering Office:Phone:Fax:E-mail: EB 263C(256) 824-6136(256) firstname.lastname@example.org Education 19881982 Ph.D. B.S. Princeton University, Electrical Materials and Devices Shanghai University of Technology, Applied physics Biography Prior to joining the faculty at UAH, Dr. Shen worked as a Staff Scientist at Glasstech Solar, Inc., in charge of research programs such as thin film transistors, solar cells, device modeling, plasma enhanced CVD materials, sputtered or eveporated thisn film materials. After joining UAH he developed a thin film materials and devices research laboratory and supervised graduate student projects there in addition to teaching related courses. Research Expertise Thin film semiconductor materials and devices, flat panel displays, solar cells, novel silicon-on-insulator materials and devices. Honors & Awards tbd Recent Publications “Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism”, Li Zheng, Xinhong Cheng, Zhongjian Wang, Chao Xia, Duo Cao, Lingyan Shen, Qian Wang, Yuehui Yu, and Dashen Shen, J. Phys. Chem. C, 2015, 119 (11), pp 5995–6000, Publication Date (Web): March 5, 2015 “Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si”, Duo Cao, Xinhong Cheng, Li Zheng, Dawei Xu, Zhongjian Wang, Cao Xia, Lingyan Shen, Yuehui Yu, Dashen Shen, J. Vac. Sci. Technol. B 33, 01A101 (2015) “Improvement of SOI Trench LDMOS Performance with Double Vertical Metal Field Plate”, Chao Xia, Xinhong Cheng, Zhongjian Wang, Dawei Xu, Duo Cao, Li Zheng, Lingyang Shen, Yuehui Yu, and Dashen Shen, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 10, p. 3477, OCTOBER 2014 “Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition”, Wenyan Wan, Xinhong Cheng, Duo Cao, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Lingyang Shen, Yuehui Yu, and Dashen Shen, J. Vac. Sci. Technol. A 32, 01A127 (2014) “A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate”, Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen, Microelectronics Reliability, Elsevier Science. Oxford, Vol. 54, p. 582, March 2014 “Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition”, Li Zheng, Xinhong Cheng, Duo Cao, Zhongjian Wang, Chao Xia, Yuehui Yu, and Dashen Shen, Appl. Phys Lett, vol. 104, 023112, 2014 “Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films”, Duo Cao, Xinhong Cheng, Yuehui Yu, Xiaolong Li, Chunze Liu, Dashen Shen and Stephan Mandl, Appl. Phys Lett, vol. 103, 081607, 2013. “Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition”, Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu, Dashen Shen, IEEE Tran. Nuclear Science, vol. 60 (2), p. 1373, April 2013 “Characterization of HfO2/La2O3 layered stacking deposited on Si substrate”, Cao Duo, Cheng Xinhong, Jia Tingting, Xu Dawei, Xia Chao, Wang Zhongjian, Yu Yuehui and Shen Dashen, J. Vac. Sciense & Tech B, Vol. 31 (1), p. 01A113, Jan. 2013 “on-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS”, , Xia Chao, Cheng Xinhong, Wang Zhongjian, Cao Duo, Jia Tingting, Yu Yuehui and Shen Dashen, IEEE Trans Electron Devices, Vol 60 (3), p1279, March 2013 "Design of an a-Si:H Interface Circuit for Liquid Crystal Chemical and Biological Sensor Array," Alireza Hassanzadeh, Robert G. Lindquist, and Dashen Shen, IEEE Sensors Journal, Vol. 12, NO. 5, p. 1284, May 2012. "Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment," Dawei Xu, Xinhong Cheng, Youwei Zhang, Zhongjian Wang, Cao Xia, Duo Cao, Yuehui Yu, Dashen Shen, J. Microelectronic Engineering, Volume 93, May, 2012 Pages 15-18, Elsevier Science. Oxford. "A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate," Wang Zhongjian, Cheng Xinhong, Xia Chao, Xu Dawei, Cao Duo, Song Zhaorui, Yu Yuehui and Shen Dashen, Journal of Semiconductors, 2012,33(5):054003-4. "Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe," Dapeng Xu, Li Wang, Xinhong Cheng, Dawei He, Zhaorei Song, Yuehui Yu, Rare Metal Materials & Engineering; Aug. 2011, Vol. 40 Issue 8, p1344-1347. Elsevier Science. Oxford "The properties of high-k gate dielectric films deposited on HRSOI," Xinhong Cheng, Dapeng Xu, Zhaorui Song, Dawei He, Yuehui Yu, Qingtai Zhao and Dashen Shen, Microelectronic Engineering, Vol. 86, Issue 12, pp. 2404-2407, 2009. "Characterization of gadolinium oxide film by pulse laser deposition," Xinhong Cheng, Dapeng Xu, Zhaorui Song, Dawei He, Yuehui Yu, Qingtai Zhao, Dashen Shen, Applied Surface Science, Vol. 256, Issue 3, pp. 921-923, 2009. "Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3,” Xinhong Cheng, Dawei He, Zhaorui Song, Yuehui Yu, Dashen Shen, Rare Metal Materials and Engineering, Vol. 38, Issue 2, pp. 189-192, 2009. "Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer," Xinhong Cheng, Zhaorui Song, Yumei Xing, Yuehui Yu and Dashen Shen, Thin Solid Films, Vol. 517, pp. 462-464, 2008 "Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics," Zhaorui Song, Xinhong Cheng, Enxia Zhang, Yumei Xing, Yuehui Yu, Zhengxuan Zhang, Xi Wang and Dashen Shen, Thin Solid Films, Vol. 517, pp. 465-467, 2008. "The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer," Xinhong Cheng, Dawei He, Zhaorui Song, Yuehui Yu and Dashen Shen, Microelectronic Engineering, Vol. 85, pp. 1888-1891, 2008. "Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films," Z.R. Song, X.H. Cheng, E.X. Zhang, Y.M. Xing, Q.W. Shen, Y.H. Yu, Z.X. Zhang, X. Wang and D.S. Shen, Nucl. Inst. Meth B. Vol. 257, p. 501-504, 2007. "Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer," Xinhong Cheng, Li Wan, Zhaorui Song, Yuehui Yu and Dashen Shen, Appl. Phys Lett, vol. 90, 152910, 2007.