Tiimothy B. Boykin, Ph.D.


Boykin Tim_smProfessor
Electrical & Computer Engineering

Office:
Phone:
Fax:
E-mail:

EB 263E
(256) 824-6269
(256) 824-6803
boykint@uah.edu


Education

1992   Ph.D.   Stanford University, Electrical Engineering

1988   M.S.   Stanford University, Electrical Engineering

1987     B.S.    Rice University (summa cum laude),Electrical Engineering

Biography

Timothy Boykin's research centers on the physics of quantum wells, superlattices, nanowires, nanoribbons, and other quantum-confined heterostructures. Most of his work has involved full-bandstructure modeling these structures with empirical tight-binding techniques. Highlights of his research include the first numerically-stable, realistic bandstructure empirical tight-binding calculation for a resonant-tunneling diode including space-charge regions (1991); The generalized eigenproblem method for obtaining surface and interface states (1996); Analytic effective mass expressions for and investigations of the capabilities of many commonly employed tight-binding models (1997-99, 2004); Electromagnetic interactions in tight-binding (1999-2002); Tight-binding strain models (2002, 2010); Valley-splitting in Si quantum wells for quantum computing devices (2004-08); Brillouin zone unfolding and approximate bandstructures of semiconductor alloys and alloy nanodevices (2005-09); and Multi-band tight-binding models for graphene (2011).

He has published over 85 refereed journal articles and his sole- and first-author articles alone have been cited by other authors (no common coauthors in cited and citing articles) over 920 times; total citations exceed 1200. He is a Senior Member of IEEE and a Fellow of the American Physical Society.

Research Expertise

  • Full-bandstructure modeling of nanostructures/devices

  • Tight-binding models of semiconductor heterostructures

Honors & Awards

  • Fellow, American Physical Society (2011)

  • UAH Outstanding Engineering Faculty Award (2012)
  • UAH Foundation Research Award (2001)

Recent Publications

SungGeun Kim, Mathieu Luisier, Timothy B. Boykin, and Gerhard Klimeck, “Computational Study of Heterojunction Graphene Nanoribbon Tunneling Transistors with p/d Orbital Tight-binding Method,” Applied Physics Letters 104, 243113 (2014).

Ganesh Hegde, Michael Povolotskyi, Tillmann Kubis, Timothy Boykin, and Gerhard Klimeck, “An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation,” Journal of Applied Physics 115, 123703 (2014).

Timothy B. Boykin, “Effective interactions and block diagonalization in quantum-mechanical problems,” Journal of Mathematical Chemistry 52, 1599 (2014).

Neerav Kharche, Timothy B. Boykin, and Saroj K. Nayak, “Multiscale Modeling of Screening Effects on Conductivity of Graphene in Weakly Bonded Graphene-Dielectric Heterostructures,” Journal of Computational Electronics 12, 722 (2013).

Xueping Jiang, Neerav Kharche, Paul Kohl, Timothy B. Boykin, Gerhard Klimeck, Mathieu Luisier, Pulickel M. Ajayan, and Saroj K. Nayak, “Giant Quasiparticle Band Gap Modulation in Graphene Nanoribbons Supported on Weakly Interacting Surfaces,” Applied Physics Letters 103, 133107 (2013). 

 M. Luisier, T. B. Boykin, Z. Ye, A. Martini, G. Klimeck, N. Kharche, X. Jaing, and S. Nayak, “Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons,” Applied Physics Letters 102, 253506 (2013). 

 Zhengping Jiang, Marcelo A. Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy B. Boykin, Tillmann Kubis, Gerhard Klimeck, and Glenn J. Martyna, “Electron transport in nano-scaled piezoelectronic devices,” Applied Physics Letters 102, 193501 (2013). 

 Yaohua Tan, Michael Povolotskyi, Tillmann Kubis, Yu He, Zhengping Jiang, Gerhard Klimeck, and Timothy B. Boykin, “Empirical tight-binding parameters for GaAs and MgO with explicit basis through DFT mapping,” Journal of Computational Electronics 12, 56 (2013).

Mehdi Salmani-Jelodar, Abhijeet Paul, Timothy Boykin, and Gerhard Klimeck, “Calculation of phonon spectrum and thermal properties in suspended <100> InxGa1-xAs nanowires,” Journal of Computational Electronics 11, 22 (2012) (INVITED).

Zhengping Jiang, Neerav Kharche, Timothy Boykin, and Gerhard Klimeck, “Effects of interfacedisorder on valley splitting in SiGe/Si/SiGe quantum wells,” Applied Physics Letters 100, 103502 (2012).

Sung Geun Kim, Mathieu Luisier, Timothy B. Boykin, and Gerhard Klimeck, “Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors,” Applied Physics Letters 99, 232107 (2011).

Muhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, Shaikh S. Ahmed, Hubert J. Krenner, Timothy B. Boykin, and Gerhard Klimeck, “Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations,” Nanotechnology 22, 315709 (2011).

Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck, Xueping Jiang, Neerav Kharche, and Saroj K. Nayak, “Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons,” Journal of Applied Physics 109, 104304 (2011).

SungGeun Kim, Mathieu Luisier, Timothy Boykin, and Gerhard Klimeck, "Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors," Applied Physics Letters 99, 232107 (2011).

S. Kim, M. Luisier, A. Paul, T. B. Boykin, and G. Klimeck, “Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs,” IEEE Transactions on Electron Devices 58, 1371 (2011).

Muhammad Usman, Yui H. Matthias Tan, Hoon Ryu, Shaikh S. Ahmed, Hubert J. Krenner, Timothy B. Boykin, Gerhard Klimeck, "Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations," Nanotechnology 22, 315709 (2011).

Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck, Xueping Jiang, Neerav Kharche, Yu Zhou, and Saroj K. Nayak, “Accurate six-band nearest-neighbor tight-binding model for the ρ-bands of bulk graphene and graphene nanoribbons,” Journal of Applied Physics 109, 104304 (2011).

Timothy B. Boykin, Mathieu Luisier, Mehdi Salmani-Jelodar, and Gerhard Klimeck, “Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parameterization,” Physical Review B 81, 125202 (2010).

Timothy B. Boykin, Mathieu Luisier, and Gerhard Klimeck, “Current density and continuity in discretized models,” European Journal of Physics 31, 1077 (2010).

Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, and Lloyd C. L. Hollenberg, “Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors,” Physical Review B 80, 115301 (2009).

Neerav Kharche, Seongmin Kim, Timothy B. Boykin, and Gerhard Klimeck, “Valley degeneracies in (111) silicon quantum wells,” Applied Physics Letters 94, 042201 (2009).

Timothy B. Boykin, Mathieu Luisier, and Gerhard Klimeck, “Multi-band transmission calculations for nanowires using an optimized renormalization method,” Physical Review B 77, 165318 (2008).

Timothy B. Boykin, Neerav Kharche, and Gerhard Klimeck, “Brillouin zone unfolding of perfect supercells having non-equivalent primitive cells illustrated with a Si/Ge tight-binding parameterization,” Physical Review B 76, 035310 (2007).

Timothy B. Boykin, Neerav Kharche, Gerhard Klimeck, and Marek Korkusinski, “Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations,” Journal of Physics: Condensed Matter 19, 036203 (2007).

Timothy B. Boykin, Mathieu Luisier, Andreas Schenk, Neerav Kharche, and Gerhard Klimeck, “The electronic structure and transmission characteristics of disordered AlGaAs nanowires,” IEEE Transactions on Nanotechnology 6, 43 (2007).