Tiimothy B. Boykin, Ph.D.
Electrical & Computer Engineering
Stanford University, Electrical Engineering
Timothy Boykin's research centers on the physics of quantum wells, superlattices, nanowires, nanoribbons, and other quantum-confined heterostructures. Most of his work has involved full-bandstructure modeling these structures with empirical tight-binding techniques. Highlights of his research include the first numerically-stable, realistic bandstructure empirical tight-binding calculation for a resonant-tunneling diode including space-charge regions (1991); The generalized eigenproblem method for obtaining surface and interface states (1996); Analytic effective mass expressions for and investigations of the capabilities of many commonly employed tight-binding models (1997-99, 2004); Electromagnetic interactions in tight-binding (1999-2002); Tight-binding strain models (2002, 2010); Valley-splitting in Si quantum wells for quantum computing devices (2004-08); Brillouin zone unfolding and approximate bandstructures of semiconductor alloys and alloy nanodevices (2005-09); and Multi-band tight-binding models for graphene (2011).
He has published over 75 refereed journal articles and his sole- and first-author articles alone have been cited by other authors (no common coauthors in cited and citing articles) over 670 times. He is a Senior Member of IEEE and a Fellow of the American Physical Society.
Full-bandstructure modeling of nanostructures/devices
Tight-binding models of semiconductor heterostructures
Honors & Awards
Fellow, American Physical Society (2011)
- UAH Outstanding Engineering Faculty Award (2012)
UAH Foundation Research Award (2001)
Mehdi Salmani-Jelodar, Abhijeet Paul, Timothy Boykin, and Gerhard Klimeck, “Calculation of phonon spectrum and thermal properties in suspended <100> InxGa1-xAs nanowires,” Journal of Computational Electronics 11, 22 (2012) (INVITED).
Zhengping Jiang, Neerav Kharche, Timothy Boykin, and Gerhard Klimeck, “Effects of interfacedisorder on valley splitting in SiGe/Si/SiGe quantum wells,” Applied Physics Letters 100, 103502 (2012).
Sung Geun Kim, Mathieu Luisier, Timothy B. Boykin, and Gerhard Klimeck, “Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors,” Applied Physics Letters 99, 232107 (2011).
Muhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, Shaikh S. Ahmed, Hubert J. Krenner, Timothy B. Boykin, and Gerhard Klimeck, “Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations,” Nanotechnology 22, 315709 (2011).
Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck, Xueping Jiang, Neerav Kharche, and Saroj K. Nayak, “Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons,” Journal of Applied Physics 109, 104304 (2011).
SungGeun Kim, Mathieu Luisier, Timothy Boykin, and Gerhard Klimeck, "Effects of Interface Roughness Scattering on Radio Frequency Performance of Silicon Nanowire Transistors," Applied Physics Letters 99, 232107 (2011).
S. Kim, M. Luisier, A. Paul, T. B. Boykin, and G. Klimeck, “Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs,” IEEE Transactions on Electron Devices 58, 1371 (2011).
Muhammad Usman, Yui H. Matthias Tan, Hoon Ryu, Shaikh S. Ahmed, Hubert J. Krenner, Timothy B. Boykin, Gerhard Klimeck, "Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations," Nanotechnology 22, 315709 (2011).
Timothy B. Boykin, Mathieu Luisier, Gerhard Klimeck, Xueping Jiang, Neerav Kharche, Yu Zhou, and Saroj K. Nayak, “Accurate six-band nearest-neighbor tight-binding model for the ρ-bands of bulk graphene and graphene nanoribbons,” Journal of Applied Physics 109, 104304 (2011).
Timothy B. Boykin, Mathieu Luisier, Mehdi Salmani-Jelodar, and Gerhard Klimeck, “Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for  uniaxial strain applied to a silicon parameterization,” Physical Review B 81, 125202 (2010).
Timothy B. Boykin, Mathieu Luisier, and Gerhard Klimeck, “Current density and continuity in discretized models,” European Journal of Physics 31, 1077 (2010).
Rajib Rahman, Seung H. Park, Timothy B. Boykin, Gerhard Klimeck, Sven Rogge, and Lloyd C. L. Hollenberg, “Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors,” Physical Review B 80, 115301 (2009).
Neerav Kharche, Seongmin Kim, Timothy B. Boykin, and Gerhard Klimeck, “Valley degeneracies in (111) silicon quantum wells,” Applied Physics Letters 94, 042201 (2009).
Timothy B. Boykin, Mathieu Luisier, and Gerhard Klimeck, “Multi-band transmission calculations for nanowires using an optimized renormalization method,” Physical Review B 77, 165318 (2008).
Timothy B. Boykin, Neerav Kharche, and Gerhard Klimeck, “Brillouin zone unfolding of perfect supercells having non-equivalent primitive cells illustrated with a Si/Ge tight-binding parameterization,” Physical Review B 76, 035310 (2007).
Timothy B. Boykin, Neerav Kharche, Gerhard Klimeck, and Marek Korkusinski, “Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations,” Journal of Physics: Condensed Matter 19, 036203 (2007).
Timothy B. Boykin, Mathieu Luisier, Andreas Schenk, Neerav Kharche, and Gerhard Klimeck, “The electronic structure and transmission characteristics of disordered AlGaAs nanowires,” IEEE Transactions on Nanotechnology 6, 43 (2007).
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