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Dashen ShenProfessor
Electrical & Computer Engineering

Office:
Phone:
Fax:
E-mail:

EB 263C
(256) 824-6136
(256) 824-6803
shend@uah.edu

Education

1988
1982

     Ph.D.
     B.S.

     Princeton University, Electrical Materials and Devices
     Shanghai University of Technology, Applied physics

View Dashen Shen's resume

Biography

Prior to joining the faculty at UAH, Dr. Shen worked as a Staff Scientist at Glasstech Solar, Inc., in charge of research programs such as thin film transistors, solar cells, device modeling, plasma enhanced CVD materials, sputtered or eveporated thisn film materials. After joining UAH he developed a thin film materials and devices research laboratory and supervised graduate student projects there in addition to teaching related courses.

Research Expertise

Thin film semiconductor materials and devices, flat panel displays, solar cells, novel silicon-on-insulator materials and devices.

Publications

  • “Reversible n-Type Doping of Graphene by H2O-Based Atomic-Layer Deposition and Its Doping Mechanism”, Li Zheng, Xinhong Cheng, Zhongjian Wang, Chao Xia, Duo Cao, Lingyan Shen, Qian Wang, Yuehui Yu, and Dashen Shen, J. Phys. Chem. C, 2015, 119 (11), pp 5995–6000, Publication Date (Web): March 5, 2015
  • “Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si”, Duo Cao, Xinhong Cheng, Li Zheng, Dawei Xu, Zhongjian Wang, Cao Xia, Lingyan Shen, Yuehui Yu, Dashen Shen, J. Vac. Sci. Technol. B 33, 01A101 (2015)
  • “Improvement of SOI Trench LDMOS Performance with Double Vertical Metal Field Plate”, Chao Xia, Xinhong Cheng, Zhongjian Wang, Dawei Xu, Duo Cao, Li Zheng, Lingyang Shen, Yuehui Yu, and Dashen Shen, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 10, p. 3477, OCTOBER 2014
  • “Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition”, Wenyan Wan, Xinhong Cheng, Duo Cao, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Lingyang Shen, Yuehui Yu, and Dashen Shen, J. Vac. Sci. Technol. A 32, 01A127 (2014)
  • “A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate”, Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen, Microelectronics Reliability, Elsevier Science. Oxford, Vol. 54, p. 582, March 2014
  • “Property transformation of graphene with Al2O3 films deposited directly by atomic layer deposition”, Li Zheng, Xinhong Cheng, Duo Cao, Zhongjian Wang, Chao Xia, Yuehui Yu, and Dashen Shen, Appl. Phys Lett, vol. 104, 023112, 2014
  • “Competitive Si and La effect in HfO2 phase stabilization in multi-layer (La2O3)0.08(HfO2) films”, Duo Cao, Xinhong Cheng, Yuehui Yu, Xiaolong Li, Chunze Liu, Dashen Shen and Stephan Mandl, Appl. Phys Lett, vol. 103, 081607, 2013.
  • “Total-Dose Radiation Response of HfLaO Films Prepared by Plasma Enhanced Atomic Layer Deposition”, Duo Cao, Xinhong Cheng, Tingting Jia, Li Zheng, Dawei Xu, Zhongjian Wang, Chao Xia, Yuehui Yu, Dashen Shen, IEEE Tran. Nuclear Science, vol. 60 (2), p. 1373, April 2013
  • “Characterization of HfO2/La2O3 layered stacking deposited on Si substrate”, Cao Duo, Cheng Xinhong, Jia Tingting, Xu Dawei, Xia Chao, Wang Zhongjian, Yu Yuehui and Shen Dashen, J. Vac. Sciense & Tech B, Vol. 31 (1), p. 01A113, Jan. 2013
  • “on-Resistance Degradation Induced by Hot-Carrier Injection in SOI SJ-LDMOS”, , Xia Chao, Cheng Xinhong, Wang Zhongjian, Cao Duo, Jia Tingting, Yu Yuehui and Shen Dashen, IEEE Trans Electron Devices, Vol 60 (3), p1279, March 2013
  • “Design of an a-Si:H Interface Circuit for Liquid Crystal Chemical and Biological Sensor Array”, Alireza Hassanzadeh, Robert G. Lindquist, and Dashen Shen, IEEE Sensors Journal, VOL. 12, NO. 5, p. 1284, May 2012
  • “Plasma enhanced atomic layer deposition of HfO2 with in situ plasma treatment”, Dawei Xu, Xinhong Cheng, Youwei Zhang, Zhongjian Wang, Cao Xia, Duo Cao, Yuehui Yu, Dashen Shen, J. Microelectronic Engineering, Elsevier Science. Oxford, Volume 93, Pages 15-18, May, 2012
  • “A 680 V LDMOS on a thin SOI with an improved field oxide structure and dual field plate”, Wang Zhongjian, Cheng Xinhong, Xia Chao, Xu Dawei, Cao Duo, Song Zhaorui, Yu Yuehui and Shen Dashen, Journal of Semiconductors, 33(5):054003-4, 2012
  • “Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe”, Dapeng Xu, Li Wang, Xinhong Cheng, Dawei He, Zhaorei Song, Yuehui Yu, Rare Metal Materials & Engineering; Elsevier Science. Oxford, Vol. 40 Issue 8, p1344-1347, Aug 2011
  • “The properties of high-k gate dielectric films deposited on HRSOI”, Xinhong Cheng, Dapeng Xu, Zhaorui Song, Dawei He, Yuehui Yu, Qingtai Zhao and DaShen Shen, Microelectronic Engineering, Vol. 86, Issue 12, p. 2404-2407, 2009
  • “Characterization of gadolinium oxide film by pulse laser deposition”, Xinhong Cheng, Dapeng Xu, Zhaorui Song, Dawei He, Yuehui Yu, Qingtai Zhao, DaShen Shen, Applied Surface Science, Vol. 256, Issue 3, p. 921-923, 2009
  • “Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3”, Xinhong Cheng, Dawei He, Zhaorui Song, Yuehui Yu, Dashen Shen, Rare Metal Materials and Engineering, Vol. 38, Issue 2, p. 189-192, 2009
  • “Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer”, Xinhong Cheng, Zhaorui Song, Yumei Xing, Yuehui Yu and Dashen Shen, Thin Solid Films, Vol. 517, p. 462-464, 2008
  • “Influence of preparing process on total-dose radiation response of high-k Hf-based gate dielectrics”, Zhaorui Song, Xinhong Cheng, Enxia Zhang, Yumei Xing, Yuehui Yu, Zhengxuan Zhang, Xi Wang and Dashen Shen, Thin Solid Films, Vol. 517, p. 465-467, 2008
  • “The effect of blocking layer of Al2O3 on thermal stability and electrical properties of HfO2 dielectric films deposited on SiGe layer”, Xinhong Cheng, Dawei He, Zhaorui Song, Yuehui Yu and DaShen Shen, Microelectronic Engineering, Vol. 85, p. 1888–1891, 2008
  • “Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films”, Z.R. Song, X.H. Cheng, E.X. Zhang, Y.M. Xing, Q.W. Shen, Y.H. Yu, Z.X. Zhang, X. Wang and D.S. Shen, Nucl. Inst. Meth B. Vol. 257, p. 501-504, 2007
  • “Interfacial structures and electrical properties of HfAl2O5 gate dielectric film annealed with a Ti capping layer”, Xinhong Cheng, Li Wan, Zhaorui Song, Yuehui Yu and Dashen Shen, Appl. Phys Lett, vol. 90, 152910, 2007
  • "Characteristics of HfxSiyO films grown on Si0.8Ge0.2 layer by electron beam
  • evaporation", X.H. Cheng, Z.R. Song, Y.H. Yu, W.W. Yang, D.S. Shen, Appl. Phys. Lett, Vol, 122906, 2006
  • “Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications”, X.H. Cheng, Z.R. Song, J. Jiang, Y.H. Yu, W.W. Yang, D.S. Shen, Applied Surface Science, Vol. 252, Issue 23, p. 8073-8076, 2006
  • “A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs”, W.W. Yang, X.H. Cheng, Y.H. Yu, Z.R. Song, D.S. Shen, Solid-State Electronics, Vol. 49, p. 43-48, 2005
  • “Patterned silicon-on-insulator technology for RF Power LDMOSFET”, X.H. Cheng, Z.R. Song, Y.M. Dong, Y.H. Yu, D.S Shen. Microelectronic Engineering, Vol. 81(1), p.150-155, 2005
  • “InGaN/GaN MQD p–n junction photodiodes”, Shang-Chao Hung, Yan-Kuin Su, Shoou-Jinn Chang, Liang-Wen Ji, Dashen Shen and C.H. Huang, Physica E: Low-dimensional Systems and Nanostructures, Vol. 30, p. 13-16, 2005
  • “A Simple Fermi-Dirac Integrating Circuit”, D. Hite, T.B. Boykin, N. Singh and D.S. Shen, Am. J. Phys. Vol 79 (9), p. 856-859, 2005
  • “A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath p Well”, X.H. Cheng,W.W. Yang,Z.R. Song, Y.H. Yu and D.S. Shen, Chinese Journal of Semiconductors. Vol. 25, p. 1580, 2004
  • “Electron field emission from SiC/Si heterostructures by high temperature carbon implantation into silicon”, Y.M. Xing, J.H. Zhang, W.W. Yang, Y.H. Yu, Z.R. Song, Z.X. Lin and D.S. Shen, Appl. Phys. Lett, Vol. 84, p.5461, 2004
  • “Simulation and characterization on properties of AlN films for SOI application”, Z.R. Song, Y.H. Yu, S.C. Zou, Z.H. Zheng, D.S. Shen, E.Z. Lou, Z. Xie, B. Sundaravel, S.P. Wong, I.H. Wilson, Thin Solid Films, Vol. 459, p.41-47, 2004
  • “Electrical properties and microstructure of buried oxide (BOX) of SIMOX studied by conducting atomic force microscopy (c-AFM)”, Z.R. Song, K.W. Chen, Y.H. Yu, E.Z. Lou, D.S. Shen, Thin Solid Films, Vol. 459, p.58-62, 2004
  • “Spectroscopic ellipsomitry characterization of the interfacial roughness in SIMOX wafers”, W.J. Li, Z.R. Song, K. Tao, X.H. Cheng, W.W. Yang, Y.H. Yu, X. Wang, S.C. Zou, D.S. Shen, Thin Solid Films, Vol. 459, p.63-66, 2004
  • “sp3/sp2 ratio in amorphous-carbon thin film by spectroscopic ellipsometry”, W. J. Li, Z. R. Song, Y. H. Yu, X. Wang, S. C. Zou and D. S. Shen, J. Appl. Phys., Vol. 94, p.284, 2003
  • “Characterization of nano-sized Si islands in buried oxide (BOX) layer of SIMOX by using conducting AFM”, K.W. Chen, Y. H. Yu, E. Z. Luo, Z. Xie, J. B. Xu, I. H. Wilson, W. Y. Bishop and D. S. Shen, Chemical Physics Lett., Vol 376/5-6 pp 748-752, 2003
  • “Dielectric properties of AIN thin films formed by ion beam enhanced deposition”, Z. R. Song, Y. H. Yu, D. S. Shen, S. C. Zou, Z. H. Zheng, E. Z. Luo, Z. Xie, Materials Letters, Vol. 57, pp 4643-4647, 2003
  • "Tetrahedral amorphous carbon thin film for silicon-on-insulator application", Z. R. Song, Y. H. Yu, C. L. Li, S. C. Zou, F. M. Zhang and X. Wang; D. S. Shen; E. Z. Luo, B. Sundaravel, S. P. Wong and I. H. Wilson, Appl. Phys. Lett., Vol 80, p. 743, 2002
  • “Amorphous Silicon Photodetector for Optical Interconnections”, Rhonda Gaede, Fenglei Li, David Hyde and Dashen Shen, J. Non-crystalline Solids,, Vol. 266-269, p. 1208, 2000
  • "Numerical Calculation of Gate Line Delay in Very Large Active Matrix Liquid Crystal Display with Via Holes", Qing Zhang and D.S. Shen, IEEE Tran Circuits and Systems, Vol 46, p. 435, 1999
  • “Modeling of Gate Line Delay in Very Large Active Matrix Liquid Crystal Displays”, Q. Zhang, D.S. Shen, H. Gleskova and S. Wagner, IEEE Tran. Electron Devices, Vol. 45, p. 343, 1998
  • “Photoresist-free Fbrication Process for a-Si:H TFTs”, H. Gleskova, S. Wagner and D.S. Shen, J. Non-Crystalline Solids, Vol. 227-230, p. 1217, 1998, also Conf. ICAMS’97
  • “Via Hole Technology for Thin Film Transistor Circuits”, H. Gleskova, S. Wagner, Q. Zhang and D.S. Shen, IEEE Electron Device Lett., Vol. 18, p. 523, 1997
  • “Electrophotographically Patterned Thin Film Transistors”, H. Gleskova, R. Konenkamp, S. Wagner and D.S. Shen, IEEE Electron Device Lett., Vol. 17, p. 264, 1996
  • “Transient Photocurrent in Hydrogenated Amorphous Silicon and Implications for Photodetector Devices”, D.S. Shen and S. Wagner, J. Appl. Phys., Vol. 79, p. 794, 1996
  • “In-plane Photoconductivity in Amorphous Silicon Doping Multilayers”, J.P. Conde, M. Silva, V. Chu, H. Gleskova, K. Vasanth, S. Wagner, D.S. Shen, P. Popovic, S. Grebner, R. Schwarz, Phil. Mag. B, Vol. 74, p. 331, 1996
  • “Electrophotographic Patterning of Thin-Film Silicon on Glass Foil”, H. Gleskova, S. Wagner and D.S. Shen, IEEE Electron Device Lett., Vol. 16, p. 418, 1995
  • “Numerical Modeling of the Dependence of the Steady State Photoconductivity in Hydrogenated Amorphous Silicon on the Rate of Carrier Generation”, D.S. Shen and S. Wagner, J. Appl. Phys., Vol. 78, p. 278, 1995
  • "Amorphous Silicon Thin Film Photodetectors for Optical Interconnection", D.S. Shen, S.T. Kowel and C. A. Eldering, Optical Eng., Vol. 34(3), p. 881, 1995
  • "Carrier Lifetime in Amorphous Semiconductor", D.S. Shen, J.P. Conde, V. Chu and S. Wagner, J. Appl. Phys., Vol. 75, p. 7349, 1994
  • "Properties of Amorphous Silicon/Amorphous Silicon-Germanium Multilayers", J.P. Conde, V. Chu, D.S. Shen and S. Wagner, J. Appl. Phys., Vol. 75, p. 1638, 1994
  • "Ion Implantation in Polycrystalline Silicon Thin Film Transistors", D.S. Shen and R.Y. Kwor, Nucl. Inst. Meth. Vol. B74, p. 113, 1993
  • "Thin Boron Doped Microcrystalline Silicon Films", D.S. Shen and P.K. Bhat, Solar Energy Materials and Solar Cells, Vol. 30, p. 139, 1993
  • "Amorphous Silicon-Germanium Thin Film Photodetector Array", D.S. Shen, J.P. Conde, V. Chu, S. Aljishi, J.Z. Liu and S. Wagner, IEEE Electron Device Lett., Vol. 13, p. 5, 1992
  • "High-deposition-rate Amorphous Silicon Solar Cells: Silane or Disilane?", D.S. Shen, H. Chatham and P.K. Bhat, Solar Cells, Vol. 30, p. 271, 1991
  • "Growth Induced Surface State in Hydrogenated and Fluorinated Amorphous Silicon", A. Maruyama, J.Z. Liu, V. Chu, D.S. Shen and S. Wagner, J. Appl. Phys., Vol. 69, p.2346, 1991
  • "Improving Tunneling Junction in Amorphous Silicon Tandem Solar Cells", D.S. Shen, R.E.I. Schropp, H. Chatham, R.E. Hollingsworth, P.K. Bhat and J. Xi, Appl. Phys. Lett., Vol. 56, p. 1871, 1990
  • "New Results on Low Level Phosphorous Doping in a-Si:H", D.S. Shen and P.K. Bhat, J. of Non-cryst. Solids, Vol. 114, p. 265, 1989
  • "Bulk and Surface Properties of Amorphous Hydrogenated Fluorinated Silicon Grown from SiF4 and H2", A. Maruyama, D.S. Shen, V. Chu, J.Z. Liu, I. Campbell, P.M. Fauchet and S. Wagner, IEEE Tran. Electron Devices, Vol. 36, p. 2853, 1989
  • "Photocurrent Collection in a Schottky Barrier on an Amorphous Silicon-germanium Alloy Structure with 1.23 eV Optical Gap", V. Chu, J.P. Conde, D.S. Shen and S. Wagner, Appl. Phys. Lett., Vol. 55, p. 262, 1989
  • "Electron Transport in a-Si:H,F/a-Si,Ge:H,F Superlattices", J.P. Conde, D.S. Shen, V.Chu and S. Wagner, Superlattices and Microstructures, Vol. 6, No.1, p. 1, 1989
  • "A-Si:H,F <=> a-Si,Ge:H,F Graded Bandgap Structure", J.P. Conde, D.S. Shen, V. Chu and S. Wagner, IEEE Tran. Electron Devices, Vol. 36, P. 2834, 1989
  • "Thermal Relaxation of the Electron Conductivity in Amorphous Silicon-Germanium Alloys", J.Z. Liu, V. Chu, D.S. Shen, D. Slobodin and S. Wagner, Phys. Rev. B, Vol. 40, p. 6424, 1989
  • "Determination of the Do/- Level in Amorphous Si,Ge:H(F) by Time-of-Flight Charge Collection", D.S. Shen, J.P. Conde, V. Chu, J.Z. Liu, S. Aljishi, Z E. Smith, A. Maruyama and S. Wagner, Appl. Phys. Lett., Vol. 53, p. 1542, 1988
  • "Optical and Electronic Properties of an Amorphous Silicon-Germanium Alloy with a 1.28 eV Optical Gap", J. Kolodzey, R. Schwarz, S. Aljishi, V. Chu, D.S. Shen, P.M. Fauchet and S. Wagner, Appl. Phys. Lett., Vol. 52, p. 477, 1988
  • "Carrier Transport Mechanism in a-Si:H,F/a-Si,Ge:H,F Superlattices", J.P. Conde, S. Aljishi, D.S. Shen, M. Angell and S. Wagner, J. of Non-Crystalline Solids, Vol. 97&98, p. 939, 1987
  • "Steady State and Transient Transport in a-Si,Ge:H,F Alloys", S. Aljishi, V. Chu, Z E. Smith, D.S. Shen, J.P. Conde, D. Slobodin, J. Kolodzey and S. Wagner, J. Non-crystalline Solids, Vol. 97&98, p. 1023, 1987
  • "Carrier Scattering at Periodic a-Si:H,F Barriers in a-Si,Ge:H,F Alloys", J. Kolodzey, R. Schwarz, S. Aljishi, D.S. Shen, I. Campbell, P.M. Fauchet, S.A. Lyon and S. Wagner, Superlattices and Microstructures, Vol. 2, p. 391, 1986
  • "Transport Properties of a-Si,Ge:H Alloys Prepared from SiF4, GeF4 and H2 in R.F. or DC Glow Discharges", J. Kolodzey, D. Slobodin, S. Aljishi, S. Quinlan, R. Schwarz, D.S. Shen, P.M. Fauchet and S. Wagner, J. Non-Crystalline Solids, Vol. 77&78, p. 897, 1985